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| PNP Silicon Switching Transistors SMBT 2907 SMBT 2907 A High DC current gain: 0.1 mA to 500 mA q Low collector-emitter saturation voltage q Complementary types: SMBT 2222, SMBT 2222 A (NPN) q Type SMBT 2907 SMBT 2907 A Marking s2B s2F Ordering Code (tape and reel) Q68000-A6501 Q68000-A6474 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 77 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values Unit SMBT 2907 SMBT 2907 A 40 60 60 5 600 330 150 - 65 ... + 150 mA mW C V 290 220 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBT 2907 SMBT 2907 A Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA SMBT 2907 SMBT 2907 A Collector-base breakdown voltage IC = 10 A SMBT 2907 SMBT 2907 A Emitter-base breakdown voltage IE = 10 A Collector cutoff current VCB = 50 V VCB = 50 V VCB = 50 V, TA = 150 C VCB = 50 V, TA = 150 C Emitter cutoff current VEB = 3 V DC current gain1) IC = 100 A, VCE = 10 V IC = 1 mA, VCE = 10 V SMBT 2907 SMBT 2907 A SMBT 2907 SMBT 2907 A SMBT 2907 SMBT 2907 A SMBT 2907 SMBT 2907 A SMBT 2907 SMBT 2907 A VCEsat - - VBEsat - - - - 1.3 2.6 - - 0.4 1.6 SMBT 2907 SMBT 2907 A SMBT 2907 SMBT 2907 A IEB0 hFE 35 75 50 100 75 100 100 100 30 50 - - - - - - - - - - - - - - - - 300 300 - - V V(BR)CE0 40 60 V(BR)CB0 60 60 V(BR)EB0 ICB0 - - - - - - - - - - 20 10 20 10 10 nA nA A A Values typ. max. Unit V - - - - - - - - - - 5 nA - IC = 10 mA, VCE = 10 V1) IC = 150 mA, VCE = 10 V1) IC = 500 mA, VCE = 10 V1) Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Base-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 1) Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 2 SMBT 2907 SMBT 2907 A Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC characteristics Transition frequency IC = 20 mA, VCE = 20 V, f = 100 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz VCC = 30 V, IC = 150 mA, IB1 = 15 mA Delay time Rise time VCC = 6 V, IC = 150 mA, IB1 = IB2 = 15 mA Storage time Fall time fT Cobo Cibo 200 - - - - - - 8 30 MHz pF Values typ. max. Unit td tr tstg tf - - - - - - - - 10 40 80 30 ns ns ns ns Test circuits Delay and rise time Storage and fall time Semiconductor Group 3 SMBT 2907 SMBT 2907 A Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB = f (VCB) f = 1 MHz Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 20 V Semiconductor Group 4 SMBT 2907 SMBT 2907 SMBT 2907 A SMBT 2907 A Saturation voltage IC = f (VBEsat, VCEsat) hFE = 10 Delay time td = f (IC) Rise time tr = f (IC) hFE = 10 Storage time tstg = f (IC) Fall time tf = f (IC) Semiconductor Group 5 SMBT 2907 SMBT 2907 A DC current gain hFE = f (IC) Semiconductor Group 6 |
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